School of Computational Sciences
Kim, Dae Mann
Professor Emeritus
Micro- and Nano-electronic Devices
• Multi-Disciplinary Science and Technology Education • Quantum Electronics • Semiconductor Devices and Circuits - Flash EEPROM devices - Nano-CMOS - Molecular Electronics - Simulation/Computation Physics
- B.S. in Physics, 1960, Seoul National University
- M.S. in Physics, 1965, Yale University
- Ph.D. in Physics, 1967, Yale University
- Member of American Physical Society, Society of Information Display and Korean Electrical Society
- Fellow of Korean Academy of Science and Technology
- Associate Editor of IEEE Transactions on Circuits and Systems Video Technology (1990-1992)
Publications at KIAS
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Investigation of process-induced performance variability and optimization of the 10 nm technology node Si bulk FinFETs
SOLID-STATE ELECTRONICS, 2014 -
Characterization and Modeling of 1/f Noise in Si-nanowire FETs: Effects of Cylindrical Geometry and Different Processing of Oxides
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2011 -
C-V Characteristics in Undoped Gate-All-Around Nanowire FET Array
IEEE ELECTRON DEVICE LETTERS, 2011 -
Characteristics of the Series Resistance Extracted From Si Nanowire FETs Using the Y-Function Technique
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2010 -
Comparison of Series Resistance and Mobility Degradation Extracted from n- and p-Type Si-Nanowire Field Effect Transistors Using the Y-Function Technique
JAPANESE JOURNAL OF APPLIED PHYSICS, 2010 -
Electrode-Molecule Interface Effects on Molecular Conductance
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2009 -
Three-dimensional simulation of dopant-fluctuation-induced threshold voltage dispersion in nonplanar MOS structures targeting flash EEPROM transistors
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008 -
Interface study of metal electrode and semiconducting carbon nanotubes: Effects of electrode atomic species
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2008 -
Metal contacts in carbon nanotube field-effect transistors: Beyond the Schottky barrier paradigm
PHYSICAL REVIEW B, 2008 -
Edge profile effect of tunnel oxide on erase threshold-voltage distributions in Flash memory cells
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006 -
Modulation of molecular conductance induced by electrode atomic species and interface geometry
JOURNAL OF PHYSICAL CHEMISTRY B, 2006 -
Reliable extraction of cycling induced interface states implementing realistic P/E stresses in reference cell: Comparison with flash memory cell
IEEE ELECTRON DEVICE LETTERS, 2006 -
Modulation of the electronic structure of semiconducting nanotubes resulting from different metal contacts
JOURNAL OF PHYSICAL CHEMISTRY B, 2005 -
Simultaneous hot-hole injection at drain and source for efficient erase and excellent endurance in SONOS flash EEPROM cells
IEEE ELECTRON DEVICE LETTERS, 2003 -
Reply to "Comment on 'Unified compact theory of tunneling gate current in metal-oxide-semiconductor structures: Quantum and image force barrier lowering' [J. Appl. Phys. 92, 3724 (2002)]"
JOURNAL OF APPLIED PHYSICS, 2003 -
Unified compact theory of tunneling gate current in metal-oxide-semiconductor structures: Quantum and image force barrier lowering
JOURNAL OF APPLIED PHYSICS, 2002 -
A new quantum effect in metal-oxide-semiconductor field-effect transistor: Threshold voltage creep with gate voltage
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002 -
Quantum C-V modeling in depletion and inversion: Accurate extraction of electrical thickness of gate oxide in deep submicron MOSFETs
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002
- Office: 7303 / TEL) 82-2-958-3821 / FAX) 82-2-958-3820
- School of Computational Sciences, Korea Institute for Advanced Study
- 85 Hoegiro Dongdaemun-gu, Seoul 02455, Republic of Korea.